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 CYStech Electronics Corp.
Low VCE(sat) PNP Epitaxial Planar Transistor
Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date : Page No. : 1/4
BTB1424AD3
Features
* Excellent DC current gain characteristics * Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA. * Complementary to BTD2150AD3 * Pb-free package
Symbol
BTB1424AD3
Outline
TO-126ML
BBase CCollector EEmitter EC B
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) (Note 1) Power Dissipation(TA=25) Power Dissipation(TC=25) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -50 -50 -6 -3 -5 1 10 150 -55~+150 Unit V V V A W C C
Note 1: Single pulse, Pw10ms, Duty Cycle30%.
BTB1424AD3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *hFE fT Cob Min. -50 -50 -6 82 Typ. 240 35 Max. -0.1 -0.1 -0.4 -0.5 560 Unit V V V A A V V MHz pF
Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date : Page No. : 2/4
Test Conditions IC=-50A IC=-1mA IE=-50A VCB=-20V VEB=-5V IC=-1A, IB=-50mA IC=-2A, IB=-100mA VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification Of hFE
Rank hFE range P 82~180 Q 120~270 R 180~390 S 270~560
BTB1424AD3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
10000 Saturation Voltage---(mV)
VCE=5V
Current Gain---HFE
1000
VCESAT@IC=60IB
100
VCE=2V
100
VCE=1V
10
VCESAT=30IB VCESAT=10IB
10 1 10 100 1000 10000 Collector Current---IC(mA)
1 1 10 100 1000 Collector Current---IC(mA) 10000
Saturation Voltage vs Collector Current
10000
Power Dissipation---PD(W) Saturation Voltage---(mV)
Power Derating Curve
1.2 1 0.8 0.6 0.4 0.2 0
1000
VBESAT@IC=10IB
100 1 10 100 1000 Collector Current---IC(mA) 10000
0
50 100 150 Case Temperature---TA()
200
Power Derating Curve
12
Power Dissipation---PD(W)
10 8 6 4 2 0 0 50 100 150 Case Temperature---TC() 200
BTB1424AD3
CYStek Product Specification
CYStech Electronics Corp.
TO-126ML Dimension
Marking:
Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date : Page No. : 4/4
B1424
Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126ML Plastic Package CYStek Package Code: D3
*: Typical
DIM A B C D 1 2 F G
Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1220 0.1299 0.1181 0.1260 0.0737 0.0837 0.0294 0.0494
Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 3.10 3.30 3.00 3.20 1.87 2.12 0.74 1.25
DIM H I J K L M N O
Inches Min. Max. 0.0462 0.0562 *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842
Millimeters Min. Max. 1.17 1.42 *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1424AD3
CYStek Product Specification


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